Subject Code: EC4L001 Subject Name: Semiconductor Devices L-T-P: 3-0-0 Credits: 3
Pre-requisite(s):  Introduction to Electronics
Semiconductor Fundamentals, Crystal Structure, Energy bands, Intrinsic and extrinsic semiconductors, Fermi Level, Carrier concentrations at thermal equilibrium, Carrier transport phenomenon: drift and diffusion, Scattering, Excess carriers in semiconductors: generation, recombination and injection of carriers, transient and steady state response, Basic governing equations in semiconductors; Physical description of p-n junctions, Transport equations, current-voltage characteristics, deviations from simple theory, small-signal ac analysis, metal-semiconductor junctions, heterojunctions; BJT fundamentals, operation regions, BJT equivalent circuits and modeling frequency response of transistors, pnpn diodes, SCR; MOS structure, flat-band threshold voltages, MOS static characteristics, small signal parameters and equivalent circuit, charge sheet model, strong, moderate and weak inversion, short channel effects, scaling laws of MOS transistors, LDD MOSFET, NMOS and CMOS IC technology, CMOS latch-up phenomenon; optical absorption in a semiconductors, photovoltaic effect, solar cell, photoconductors, PIN photodiode, avalanche photodiode, LED, semiconductor lasers; Negative conductance in semiconductors, transit time devices, IMPATT, Gunn device, BiCMOS devices.
Text Books:
  1. Ben G Streetman, S K Banarjee, Solid State Electronic Devices, 6th edition, PHI India, New Delhi, 2007.
  2. R S Muller, T.I.Kamins, Device Electronics for Integrated Circuits, 3rd edition, Wiley-India, New Delhi, 2012.
Reference Books:
  1. S M Sze, K K Ng, Physics of Semiconductor Devices, 3rd edition, John Wiley, New Jersey, 2007.
  2. P Bhattacharya, Semiconductor Optoelectronics, 2nd edition, Pearson, New Jersey, 1997.